Through study of this text, the reader will develop a comprehensive understanding of the basic techniques of modern electronic circuit design, analog and digital, discrete and integrated. Even though most readers may not ultimately be engaged in the design of integrated circuits (ICs) themselves, a thorough understanding of the internal circuit structure of ICs is prerequisite to avoiding many pitfalls that prevent the effective and reliable application of integrated circuits in system design.
Digital electronics has evolved to be an extremely important area of circuit design, but it is included almost as an afterthought in many introductory electronics texts. We present a more balanced coverage of analog and digital circuits.
The writing integrates the authors’ extensive industrial backgrounds in precision analog and digital design with their many years of experience in the classroom. A broad spectrum of topics is included, and material can easily be selected to satisfy either a two-semester or three-quarter sequence in electronics.
IN THIS EDITION
This edition continues to update the material to achieve improved readability and accessibility to the student. In addition to general material updates, a number of specific changes have been included.
In Part I, the concept of velocity saturation from Chapter 2 is reinforced with the addition of the Unified MOS model of Rabaey and Chandrakasan in the Field Effect Transistors chapter, and the impact of velocity limitations on digital and analog circuits is now a recurrent topic throughout Parts II and III with discussion, examples, and new problems.
Part II has had flip-flops and latches included with other basic CMOS logic circuits in Chapter 7. Flash memory has become a pervasive technology. A significant addition to Chapter 8 is an introduction to flash memory technology and circuitry with accompanying problems. In Chapter 9, the material on T 2L has been reduced somewhat since its importance is waning, whereas a short discussion of Positive ECL (PECL) has been added. The material that was removed is still accessible on the web.
As noted above, Part III discusses biasing and distortion in the velocity saturated regime along with newproblems.A section on Darlington pairs is a new addition to Chapter 15. Improved examples of offset voltage calculations and revision of the material on the bandgap reference are included in Chapter 16. In Chapter 17 a discussion of gate resistance in FETs now mirrors that of base resistance in the BJT. An expanded discussion of the frequency response of complementary emitter followers has been added. The discussion of the impact of the frequency-dependent current gain of the FET has also been enhanced to include both the input and output impedances of the source follower configuration. Finally, the discussion of the classic and pervasive Jones Mixer has been updated. An additional example of offset voltage calculation has been added to Chapter 18 along with enhanced discussion of MOS Op Amp compensation.